Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

Journal Article · Sat May 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3275054· OSTI ID:21476177

Carcelen, V; Rodriguez-Fernandez, J; Dieguez, E ^[1]; Hidalgo, P ^[2]

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1. Dpto. Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Univ. Autonoma de Madrid, 28049 Cantoblanco (Spain)
2. Dpto. Fisica de Materiales, Facultad de Ciencias Fisicas, Univ. Complutense de Madrid, 28040 Madrid (Spain)

The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentrations (8 and 14 at. %) by the Bridgman oscillation method, in which one experiment has been carried out with a platinum (Pt) tube as the ampoule support. Pt also acts as a cold finger and reduces the growth velocity and enhances crystalline perfection. The grown single crystals have been studied with different analysis methods. The stoichiometry was confirmed by energy dispersive by x-ray and inductively coupled plasma mass spectroscopy analyses and it was found there is no incorporation of impurities in the grown crystal. The presence of Cd and Te vacancies was determined by cathodoluminescence studies. Electrical properties were assessed by I-V analysis and indicated higher resistive value (8.53x10{sup 8} {Omega} cm) for the crystal grown with higher zinc concentration (with Cd excess) compare to the other (3.71x10{sup 5} {Omega} cm).

• OSTI ID: 21476177
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH
CADMIUM COMPOUNDS
CATHODOLUMINESCENCE
CHALCOGENIDES
CHEMICAL ANALYSIS
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EMISSION
EVALUATION
ICP MASS SPECTROSCOPY
LUMINESCENCE
MASS SPECTROSCOPY
MATERIALS
METALS
MONOCRYSTALS
OSCILLATIONS
PHOTON EMISSION
PHYSICAL PROPERTIES
PLATINUM
PLATINUM METALS
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TRANSITION ELEMENTS
VACANCIES
ZINC COMPOUNDS