Simulation of redeposition during platinum etching in argon plasmas

Journal Article · Mon Mar 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3343346· OSTI ID:21476162

Saussac, J; Margot, J; Stafford, L; Chaker, M ^[1]

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1. Departement de Physique, 2900 Edouard Montpetit, Universite de Montreal, CP 6128, Succ. Centre-ville, Montreal, Quebec H3C 3J7 (Canada)

The influence of redeposition on the space and time evolution of feature profiles during platinum etching in high-density argon plasmas is examined using simulations. The simulator takes into account redeposition resulting from either direct sticking of the sputtered species on the materials walls (line-of-sight redeposition) or from sputtered species returning from plasma (indirect redeposition). Overall, the simulator successfully reproduces experimental profiles sputter etched in platinum, in particular V-shaped profiles reported in literature. From comparison between experimental and simulated profiles at very low pressure, Pt/resist sticking probability was estimated to be 0.1 and the angular spread of the sputtered atom distribution was predicted to be about {+-}50 deg. . It was further found that indirect redeposition becomes crucial at higher pressure for explaining the amount of redeposited matter.

• OSTI ID: 21476162
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 6; Other Information: DOI: 10.1063/1.3343346; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ARGON
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
DEPOSITION
ETCHING
PLASMA
PLASMA DENSITY
PLASMA SIMULATION
PLATINUM
SIMULATORS
SPUTTERING
ANALOG SYSTEMS
ELEMENTS
EVALUATION
FLUIDS
FUNCTIONAL MODELS
GASES
METALS
NONMETALS
PLATINUM METALS
RARE GASES
SIMULATION
SURFACE FINISHING
TRANSITION ELEMENTS