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Annealing of induced absorption in quartz glasses by ArF laser radiation

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
;  [1]
  1. P N Lebedev Physical Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Annealing of individual bands of electron-beam-induced absorption (IA) in the region of 150 - 400 nm in KS-4V, KU-1, and Corning 7980 (ArF Grade) quartz glasses by ArF laser radiation is studied. It is shown that the phototransformation of the IA spectra occurs mainly due to a significant decrease in the amplitudes of bands at {lambda} = 183.5, 213, and 260 nm. The role played by interstitial oxygen, hydrogen, and chlorine in the formation and relaxation of glass defects is considered. (effects of laser radiation on matter. laser plasma)
OSTI ID:
21471145
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 9 Vol. 40; ISSN 1063-7818
Country of Publication:
United States
Language:
English