Implantation of high-energy ions produced by femtosecond laser pulses

Journal Article · Mon Jan 31 00:00:00 EST 2005 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2005V035N01ABEH002754· OSTI ID:21470684

Volkov, Roman V; Golishnikov, D M; Gordienko, Vyacheslav M; Savel'ev, Andrei B ^[1]; Chernysh, V S ^[2]

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1. International Laser Center, M. V. Lomonosov Moscow State University, Moscow (Russian Federation)
2. Department of Physics, M.V. Lomonosov Moscow State University, Moscow (Russian Federation)

Germanium ions of an expanding plasma were implanted in a silicon collector. The plasma was produced by a femtosecond laser pulse with an intensity of {approx}10{sup 15} W cm{sup -2} at the surface of the solid-state target. A technique was proposed for determining the energy characteristics of the ion component of the laser plasma from the density profile of the ions implanted in the substrate. (interaction of laser radiation with matter. laser plasma)

• OSTI ID: 21470684
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 35, Issue 1; Other Information: DOI: 10.1070/QE2005v035n01ABEH002754; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
DENSITY
GERMANIUM IONS
ION IMPLANTATION
LASER TARGETS
LASER-PRODUCED PLASMA
LASERS
PULSES
SILICON
SOLIDS
SUBSTRATES
SURFACES
CHARGED PARTICLES
ELEMENTS
IONS
PHYSICAL PROPERTIES
PLASMA
SEMIMETALS
TARGETS