Below-bandgap photoreflection spectroscopy of semiconductor laser structures

Journal Article · Thu Sep 30 00:00:00 EDT 2004 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2004V034N09ABEH002884· OSTI ID:21470609

Sotnikov, Aleksandr E; Chernikov, Maksim A ^[1]; Ryabushkin, Oleg A ^[2]; Trubenko, P; Moshegov, N; Ovchinnikov, A ^[3]

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1. IRE-Polyus Research and Technology Association, Fryazino, Moscow Region (Russian Federation)
2. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow Region (Russian Federation)
3. IPG Photonics Corporation, Oxford, MA (United States)

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

• OSTI ID: 21470609
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 34, Issue 9; Other Information: DOI: 10.1070/QE2004v034n09ABEH002884; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
EXCITATION
LAYERS
OPTICAL PUMPING
PHOTOLUMINESCENCE
PHOTONS
REFLECTION
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
VISIBLE RADIATION
BOSONS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
EMISSION
ENERGY-LEVEL TRANSITIONS
LASERS
LUMINESCENCE
MASSLESS PARTICLES
MATERIALS
PHOTON EMISSION
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS