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Title: Electrically pumped edge-emitting photonic bandgap semiconductor laser

Abstract

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Inventors:
;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174668
Patent Number(s):
6,674,778
Application Number:
10/044,488
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-L
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Lin, Shawn-Yu, and Zubrzycki, Walter J. Electrically pumped edge-emitting photonic bandgap semiconductor laser. United States: N. p., 2004. Web.
Lin, Shawn-Yu, & Zubrzycki, Walter J. Electrically pumped edge-emitting photonic bandgap semiconductor laser. United States.
Lin, Shawn-Yu, and Zubrzycki, Walter J. Tue . "Electrically pumped edge-emitting photonic bandgap semiconductor laser". United States. https://www.osti.gov/servlets/purl/1174668.
@article{osti_1174668,
title = {Electrically pumped edge-emitting photonic bandgap semiconductor laser},
author = {Lin, Shawn-Yu and Zubrzycki, Walter J.},
abstractNote = {A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {1}
}

Patent:

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