Whether is it possible to produce high concentrations of carriers in a semiconductor for observing the Bose condensate at room temperature?
- P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Experiments allowing the production of carriers at high concentrations (5 x 10{sup 19}-10{sup 20} cm{sup -3}) in a semiconductor irradiated by femtosecond laser pulses are discussed. At such high concentrations, and at room temperature the formation of the Bose condensate of an electron - hole plasma is expected, which is accompanied by superradiance. A minimal (threshold) energy is determined which should be absorbed in an elementary event for producing a certain concentration of free carriers. When the carrier concentration is high, carriers with opposite mass signs can appear in the conduction band of gallium arsenide and, hence, the efficient Coulomb attraction is possible between carriers in the same band, which should be taken into account in the formation of a correlated state of carriers. (letters)
- OSTI ID:
- 21470323
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 33, Issue 5; Other Information: DOI: 10.1070/QE2003v033n05ABEH002421; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOSE-EINSTEIN CONDENSATION
CARRIERS
COULOMB FIELD
GALLIUM ARSENIDES
LASERS
PULSES
SEMICONDUCTOR MATERIALS
SOLID-STATE PLASMA
SUPERRADIANCE
TEMPERATURE RANGE 0273-0400 K
THRESHOLD ENERGY
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC FIELDS
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
MATERIALS
PHOTON EMISSION
PLASMA
PNICTIDES
STIMULATED EMISSION
TEMPERATURE RANGE