Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

Journal Article · Mon Sep 20 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3491841· OSTI ID:21466929

Casiraghi, A; Rushforth, A W; Wang, M; Farley, N R. S.; Wadley, P; Hall, J L; Staddon, C R; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L ^[1]

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1. School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

We have investigated the effects of postgrowth low temperature annealing on the magnetic, electrical, and structural properties of (Ga{sub 0.94}Mn{sub 0.06})(As{sub 0.9}P{sub 0.1}) layers grown by molecular beam epitaxy. By controlling the annealing time, we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase in the carrier density, as a result of annealing, is found to be the primary reason for the sign reversal of the magnetic anisotropy, in qualitative agreement with theoretical predictions.

• OSTI ID: 21466929
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
EPITAXY
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
LAYERS
MAGNETIC MATERIALS
MAGNETIC SEMICONDUCTORS
MANGANESE COMPOUNDS
MANGANESE PHOSPHIDES
MATERIALS
MOLECULAR BEAM EPITAXY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENT COMPOUNDS