Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
- School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom)
We present an experimental investigation of the magnetic, electrical, and structural properties of Ga{sub 0.94}Mn{sub 0.06}As{sub 1-y}P{sub y} layers grown by molecular beam epitaxy on GaAs substrates for y{<=}0.3. X-ray diffraction measurements reveal that the layers are under tensile strain, which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increases as the phosphorous concentration is increased. The resistivity of all samples shows metallic behavior with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy.
- OSTI ID:
- 21182669
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies