Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si

Journal Article · Mon Aug 09 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3478230· OSTI ID:21466886

Ming, Ma; Qingzhong, Xue; Huijuan, Chen; Xiaoyan, Zhou; Dan, Xia; Cheng, Lv; Jie, Xie ^[1]

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1. College of Physics Science and Technology, China University of Petroleum, Dongying, Shandong 257061 (China)

The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO{sub 2} layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO{sub 2}/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm{sup 2} at room temperature, the a-C:Pd/SiO{sub 2}/Si solar cell fabricated at 350 deg. C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp{sup 2}-bonded carbon clusters in the carbon film caused by the high temperature deposition.

• OSTI ID: 21466886
• Journal Information: Applied Physics Letters, Vol. 97, Issue 6; Other Information: DOI: 10.1063/1.3478230; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARBON
DEPOSITION
DOPED MATERIALS
EFFICIENCY
HETEROJUNCTIONS
LAYERS
N-TYPE CONDUCTORS
PALLADIUM
PHOTOVOLTAIC EFFECT
SILICON
SILICON OXIDES
SILICON SOLAR CELLS
SPUTTERING
SUBSTRATES
THIN FILMS
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FILMS
MATERIALS
METALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOELECTRIC EFFECT
PHOTOVOLTAIC CELLS
PLATINUM METALS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
TRANSITION ELEMENTS