GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
- Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France)
- CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)
We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.
- OSTI ID:
- 21464561
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 97; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MOBILITY
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
LINE DEFECTS
MATERIALS
MOBILITY
MOLECULAR STRUCTURE
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RELAXATION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACE TREATMENTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MOBILITY
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
LINE DEFECTS
MATERIALS
MOBILITY
MOLECULAR STRUCTURE
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RELAXATION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACE TREATMENTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K