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Percolation and emission spectra of a laser plasma upon ablation of silicon and silicon-containing composites

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ;  [1]
  1. D.V. Skobel'tsyn Institute of Nuclear Physics, M.V. Lomonosov Moscow State University, Moscow (Russian Federation)
The emission spectra of plasmas produced near the surface of silicon and sulphur samples and their mixtures by nanosecond and millisecond laser pulses are studied in a broad range of pressures of buffer gases. The percolation dependences are obtained for composite Si-S, Si-SiO{sub 2}, and SiO{sub 2}-S targets. It is found that experimental percolation thresholds coincide with the typical threshold for three-dimensional continual percolation. (interaction of laser radiation with matter. laser plasma)
OSTI ID:
21456887
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 5 Vol. 36; ISSN 1063-7818
Country of Publication:
United States
Language:
English