Two-dimensional percolation threshold in confined Si nanoparticle networks

Journal Article · Mon Jan 25 04:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4940971· OSTI ID:22489372

Gutsch, S.; Zacharias, M.; Hiller, D. ^[1]; Wang, D.; Kübel, C. ^[2]

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1. Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg im Breisgau (Germany)
2. Karlsruhe Nano and Micro Facility (KNMF) and Institute of Nanotechnology (INT), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

Non-percolating and percolating silicon quantum dot (QD) networks were investigated by plane-view energy filtered transmission electron microscopy (EF-TEM). The Si QD networks were prepared by plasma enhanced chemical vapor deposition on free standing 5 nm Si{sub 3}N{sub 4} membranes, followed by high temperature annealing. The percolation threshold from non-percolating to percolating networks is found to be in between a SiO{sub x} stoichiometry of SiO{sub 0.5} up to SiO{sub 0.7}. Using the EF-TEM images, key structural parameters of the Si QD ensemble were extracted and compared, i.e., their size distribution, nearest neighbor distance, and circularity. Increasing the silicon excess within the SiO{sub x} layer results in an ensemble of closer spaced, less size-controlled, and less circular Si QDs that give rise to coupling effects. Furthermore, the influence of the structural parameters on the optical and electrical Si QD ensemble properties is discussed.

• OSTI ID: 22489372
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CHEMICAL VAPOR DEPOSITION
MEMBRANES
PLASMA
QUANTUM DOTS
SILICON
SILICON NITRIDES
SILICON OXIDES
STOICHIOMETRY
TRANSMISSION ELECTRON MICROSCOPY
TWO-DIMENSIONAL SYSTEMS