150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)
- P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Laser diode arrays emitting at 808 nm with extremely high output parameters are manufactured. The 150-W output power of diode arrays at a pumping current of 146 A and a pulse duration of 0.2 ms is limited by the power supply current. The external differential quantum efficiency measured from the output mirror was 80%, and the maximum total efficiency was 51%. (letters)
- OSTI ID:
- 21450449
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 8 Vol. 31; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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