Full Multilayer Laue Lens for Focusing Hard X-rays

Journal Article · Wed Jun 23 04:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3463245· OSTI ID:21431074

Chian, Liu; Shi, B; Qian, J; Conley, R; Yan, H; Wieczorek, M; Macrander, A T ^[1]; Maser, J ^[1]; Stephenson, G B ^[2]

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1. X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
2. Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Multilayer Laue Lenses (MLLs) were developed by us using dynamic diffraction effects to efficiently focus hard x-rays to very small spots. Using a partial MLL we were able to focus 19.5-keV hard x-rays to a line focus of 16 nm with an efficiency of 31%. A full MLL is a complete linear MLL structure. It can be fabricated by bonding two partial MLL wafers, or by growing the full structure using magnetron sputtering without bonding. A 40-{mu}m full MLL, with a total of 5166 layers of WSi{sub 2} and Si, has been successfully grown by sputter deposition. The layer thicknesses gradually vary from 4 nm to {approx}400 nm and then back to 4 nm. Two coating runs were used to grow the full structure, one for each half. It took over 56 h for each run. A 100-{mu}m nearly-full MLL was constructed by bonding. Each 50-{mu}m half-structure has 1788 WSi{sub 2} and Si layers with 12-nm to {approx}32-nm thicknesses and {approx}32-{mu}m total thickness, followed by a thick WSi{sub 2} layer of {approx}17 {mu}m, and an AuSn layer of {approx}1 {mu}m. Both full MLL structures survived dicing and polishing. The primary results demonstrate the feasibility and potential of a full MLL with a doubled numerical aperture and large beam acceptance for hard x-rays.

• OSTI ID: 21431074
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1234; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAM ACCEPTANCE
BONDING
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
DIFFRACTION METHODS
DIMENSIONS
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ENERGY RANGE
EQUIPMENT
FABRICATION
HARD X RADIATION
IONIZING RADIATIONS
JOINING
KEV RANGE
KEV RANGE 10-100
LAUE METHOD
LAYERS
LENSES
MAGNETRONS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OPTICS
RADIATIONS
REFRACTORY METAL COMPOUNDS
SCATTERING
SILICIDES
SILICON COMPOUNDS
THICKNESS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES
X RADIATION