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Title: Development of Micron-Resolved Electron Spectroscopy to Study Organic Thin Films in Real Devices

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3463242· OSTI ID:21431072
;  [1];  [1]; ;  [2];  [3]
  1. National Synchrotron Radiation Research Center, Hsinchu, Taiwan 30076 (China)
  2. Department of Chemistry, National Tsing-Hua University, Hsinchu, Taiwan 30013 (China)
  3. Department of Chemistry, National Central University, Jhongli, Taiwan 32001 (China)

A straightforward application of an electron energy analyzer equipped with an image detector to micron-resolved electron spectroscopic studies of organic thin film devices is reported. The electron spectroscopies implemented include synchrotron-based UPS, XPS, and Auger yield NEXAFS. Along the non-energy-dispersion direction of the analyzer, a spatial resolution of {approx}40 {mu}m is obtained through the employment of entrance slits, electrostatic lenses and segmented CCD detector. One significant benefit offered by the technique is that the electronic transport and electronic structure of the same micron-sized sample can be directly examined. The example illustrated is a top-contact organic field effect transistor (OFET) fabricated from semiconducting triethylsilylethynyl anthradithiophene and gold electrodes. It is found that an extensive out-diffusion of gold atoms to adjacent conduction channels takes place, presumably due to the inability of soft organic materials in dissipating the excess energy with which gaseous Au atoms possess.

OSTI ID:
21431072
Journal Information:
AIP Conference Proceedings, Vol. 1234, Issue 1; Conference: SRI 2009: 10. international conference on radiation instrumentation, Melbourne (Australia), 27 Sep - 2 Oct 2009; Other Information: DOI: 10.1063/1.3463242; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English