Impact of Morphological Features on the Dielectric Breakdown at SiO{sub 2}/3C-SiC Interfaces

Journal Article · Mon Nov 01 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3518308· OSTI ID:21428738

Eriksson, Jens ^[1]; Roccaforte, Fabrizio; Minghung, Weng; Giannazzo, Filippo; Fiorenza, Patrick; Raineri, Vito ^[1]; Lorenzzi, Jean; Jegenyes, Nikoletta ^[2]

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1. CNR-IMM, Strada VIII n. 5, Zona Industriale, 95121, Catania (Italy)
2. LMI, UMR-CNRS 5615, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne (France)

Thin SiO{sub 2} layers were thermally grown onto cubic silicon carbide (3C-SiC) heteroepitaxial layers of different surface roughness and with different types of near-surface epitaxial defects. Localized dielectric breakdown (BD) was studied by electrically stressing the system using Conductive Atomic Force Microscopy (C-AFM), which constitutes a means to directly and simultaneously observe localized dielectric failure as a function of stress time and surface morphology with nanoscale lateral resolution. The BD kinetics was evaluated by fitting the experimental failure ratios as a function of stress time to the failure probability described by Weibull statistics, in turn allowing to distinguish between defect-induced (extrinsic) and intrinsic dielectric BD events. The results give useful information about how morphological features at the 3C-SiC surface influence the BD generation in thermally grown oxides on this polytype.

• OSTI ID: 21428738
• Journal Information: AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518308; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
BREAKDOWN
CUBIC LATTICES
DIELECTRIC MATERIALS
EPITAXY
FAILURES
FIELD EFFECT TRANSISTORS
INTERFACES
LAYERS
MORPHOLOGY
NANOSTRUCTURES
ROUGHNESS
SILICON CARBIDES
SILICON OXIDES
STRESSES
SURFACES
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
MATERIALS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SURFACE PROPERTIES
TRANSISTORS