IMPACT OF DIELECTRIC PARAMETERS ON THE REFLECTIVITY OF 3C-SiC WAFERS WITH A ROUGH SURFACE MORPHOLOGY IN THE RESTSTRAHLEN REGION

Journal Article · Tue Apr 01 00:00:00 EDT 2014 · Physica B: Condensed Matter

DOI:https://doi.org/10.1016/j.physb.2013.10.058· OSTI ID:1122124

Engelbrecht, J. A.A.; Janzén, E.; Henry, A.; van Rooyen, I. J.

A layer-on-substrate model is used to obtain the infrared reflectance for 3C-SiC with a rough surface morphology. The effect of varying dielectric parameters of the “damaged layer” on the observed reflectivity of the 3C-SiC in the reststrahlen region is assessed. Different simulated reflectance spectra are obtained to those if the dielectric parameters of the “substrate” were varied. Most notable changes in the shape of the simulated reststrahlen peak are observed for changes in the high frequency dielectric constant, the phonon damping constant, the phonon frequencies and “thickness” of damaged surface layer.

• Research Organization: Idaho National Lab. (INL), Idaho Falls, ID (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: DE-AC07-05ID14517
• OSTI ID: 1122124
• Report Number(s): INL/JOU-12-25195
• Journal Information: Physica B: Condensed Matter, Vol. 439; ISSN 0921-4526
• Country of Publication: United States
• Language: English

Related Subjects

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS
DIELECTRIC PARAMETERS
infrared reflectance
layer-on-substrate
MORPHOLOGY
Reststrahlen region
SiC Wafers