Towards Large Area Growth of 3C-SiC

Journal Article · Mon Nov 01 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3518306· OSTI ID:21428736

Vasiliauskas, Remigijus; Liljedahl, Rickard; Syvaejaervi, Mikael; Yakimova, Rositza ^[1]

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1. Department of Physics, Chemistry and Biology, Linkoeping University, SE-58183, Linkoeping (Sweden)

In this work we have analyzed the possibility of upscaling the growth of 3C-SiC. The growth was done at different temperatures to find limiting mechanisms of the growth rate and to examine the morphology of grown layers. Coverage by 3C-SiC increases when increasing temperature, however more twins appeared. Activation energy of the growth is 130 kcal/mol--showing that growth rate limiting mechanism is sublimation of the source. We discuss the influence of large area 6H-SiC wafers on the formation of 3C-SiC, in which the change in basal plane orientation could also influence the growth of 3C-SiC.

• OSTI ID: 21428736
• Journal Information: AIP Conference Proceedings, Vol. 1292, Issue 1; Conference: E-MRS Symposium F: 2010 wide bandgap cubic semiconductors - From growth to devices, Strasbourg (France), 8-10 Oct 2010; Other Information: DOI: 10.1063/1.3518306; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CRYSTAL GROWTH
INTERFACES
LAYERS
MORPHOLOGY
ORIENTATION
RAMAN SPECTRA
SILICON CARBIDES
SUBLIMATION
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
ENERGY
EVAPORATION
PHASE TRANSFORMATIONS
SCATTERING
SILICON COMPOUNDS
SPECTRA