Effect of high-{kappa} gate dielectrics on charge transport in graphene-based field effect transistors

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.82.115452· OSTI ID:21421422

Konar, Aniruddha; Tian, Fang; Jena, Debdeep ^[1]

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1. Department of Physics and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

The effect of various dielectrics on charge mobility in single-layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though high-{kappa} dielectrics can strongly reduce Coulombic scattering by dielectric screening, scattering from surface phonon modes arising from them wash out this advantage. Calculation shows that within the available choice of dielectrics, there is not much room for improving carrier mobility in actual devices at room temperatures.

• OSTI ID: 21421422
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 82, Issue 11; Other Information: DOI: 10.1103/PhysRevB.82.115452; (c) 2010 The American Physical Society; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARBON
CARRIER MOBILITY
CHARGE TRANSPORT
COMPUTERIZED SIMULATION
DIELECTRIC MATERIALS
FIELD EFFECT TRANSISTORS
HONEYCOMB STRUCTURES
IMPURITIES
LAYERS
LIGHT SCATTERING
PHONONS
SCATTERING
SCREENING
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
ELEMENTS
MATERIALS
MECHANICAL STRUCTURES
MOBILITY
NONMETALS
QUASI PARTICLES
SEMICONDUCTOR DEVICES
SIMULATION
TEMPERATURE RANGE
TRANSISTORS