Optical and Electrical Properties of Al/(p)Bi{sub 2}S{sub 3} Schottky Junction

Journal Article · Tue Jun 29 04:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3466558· OSTI ID:21410473

Kachari, T ^[1]; Wary, G ^[2]; Rahman, A ^[3]

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1. Bongaigaon Polytechnic, Bongaigaog, Assam (India)
2. Department of Physics, Cotton College, Guwahati (India)
3. Department of Physics, Gauhati University, Guwahati (India)

Thin film Al/(p)Bi{sub 2}S{sub 3} Schottky junctions were prepared by vacuum evaporation under pressure 10{sup -6} Torr. The p-type Bi{sub 2}S{sub 3} thin films with acceptor concentration (3.36-7.33)x10{sup 16}/cm{sup 3} were obtained by evaporating 'In' along with Bi{sub 2}S{sub 3} powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.

• OSTI ID: 21410473
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1249; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANNEALING
BISMUTH COMPOUNDS
BISMUTH SULFIDES
CHALCOGENIDES
CHEMICAL REACTIONS
DIMENSIONS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL FAULTS
ELECTRICAL PROPERTIES
ELEMENTS
EVAPORATION
FILMS
HEAT TREATMENTS
HEIGHT
HYDROGENATION
METALS
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
PHOTOELECTRIC EFFECT
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
POWDERS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SULFIDES
SULFUR COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
VACUUM EVAPORATION