Comparative Studies on Temperature Dependent I-V Characteristics of Al/(p)CdTe and Ni/(n)CdS Schottky Junctions and Their PV Effect

Journal Article · Tue Jun 29 00:00:00 EDT 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3466553· OSTI ID:21410471

Wary, G ^[1]; Kachari, T; Rahman, A ^[2]

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1. Department of Physics, Cotton College, Guwahati-781001 (India)
2. Department of Physics, Gauhati University, Guwahati-781014 (India)

Temperature dependent I-V characteristics of vacuum evaporated Al/(p)CdTe and Ni/(n)CdS Schottky junctions and their photovoltaic effects have been studied and compared. Different junction parameters such as ideality factors, barrier heights, Richardson's constant, short-circuit current density, fill factor, PV efficiency etc. were determined from their I-V characteristics. These parameters were found to change significantly on variation of temperature. The structures showed the change of PV effect. Efficiency found were 2.84% for Al/(p)CdTe and 4.44% for Ni hydro/(n)CdS. Polycrystalline nature, and continuous and ordered structure with bigger grain sizes of the CdS film shows more PV conversion efficiency in making Ni/(n)CdS junction as compare to Al/(p)CdTe junction. However these values were found to vary with doping concentration, and in hydrogen treated samples in both cases.

• OSTI ID: 21410471
• Journal Information: AIP Conference Proceedings, Vol. 1249, Issue 1; Conference: NCTP-09: 5. national conference on thermophysical properties, Baroda (India), 7-9 Oct 2009; Other Information: DOI: 10.1063/1.3466553; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
CADMIUM SULFIDES
CADMIUM TELLURIDES
CATHODOLUMINESCENCE
COMPARATIVE EVALUATIONS
CONVERSION
CURRENT DENSITY
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL FAULTS
FILMS
GRAIN SIZE
NICKEL
PHOTOVOLTAIC EFFECT
POLYCRYSTALS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
CADMIUM COMPOUNDS
CHALCOGENIDES
CRYSTALS
ELECTRICAL PROPERTIES
ELEMENTS
EMISSION
EVALUATION
INORGANIC PHOSPHORS
LUMINESCENCE
MATERIALS
METALS
MICROSTRUCTURE
PHOSPHORS
PHOTOELECTRIC EFFECT
PHOTON EMISSION
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SIZE
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENTS