Enhanced electrical properties of pulsed laser-deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via processing control
- Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)
Polycrystalline CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300 mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65 degto 0.54 deg. Slightly Cu-rich surface with Cu{sub 2-x}Se phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of {proportional_to}10{sup 18} cm{sup -3} and resistivity of 10{sup -1}{omega} cm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu{sub 2-x}Se phase and diffusion of Na from substrates to films. (author)
- OSTI ID:
- 21396194
- Journal Information:
- Solar Energy, Vol. 84, Issue 12; Other Information: Elsevier Ltd. All rights reserved; ISSN 0038-092X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
THIN FILMS
ENERGY BEAM DEPOSITION
LASER RADIATION
ELECTRICAL PROPERTIES
PULSED IRRADIATION
TEMPERATURE RANGE 0273-0400 K
LASERS
CRYSTALLIZATION
POLYCRYSTALS
PROCESSING
SODIUM
FABRICATION
ENERGY DEPENDENCE
CARRIER DENSITY
DIFFUSION
COPPER SELENIDES
INDIUM SELENIDES
GALLIUM SELENIDES
COPPER SELENIDE SOLAR CELLS
INDIUM SELENIDE SOLAR CELLS
TEMPERATURE DEPENDENCE
ELECTRIC CONDUCTIVITY
Pulsed laser deposition