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Kinetics of Ge-Se-In Film Growth

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3322475· OSTI ID:21371467
; ;  [1];  [2]
  1. Department of Physics, University of Chemical Technology and Metallurgy, 1756 Sofia (Bulgaria)
  2. Institute of Electrochemistry and Energy Systems, BAS, 1113 Sofia (Bulgaria)

The processes of vacuum evaporation and condensation in the Ge-Se-In system were investigated. Thin amorphous films were deposited by modified thermal evaporation from previously synthesized non-crystalline (GeSe{sub y}){sub 1-x}In{sub x} ingots, where x = 0, 5, 10, 15, 20 and y = 4, 5 and 6. The specific evaporation rate was determined by measuring of the mass of evaporator before evaporation and the mass of empty evaporator after evaporation in temperature range of evaporation (500-800) K. The substrate temperature was varied in the range (300-430) K to study the condensation process and specific condensation rate was determined by measuring of the substrate mass before and after condensation. The condensation energy of the (GeSe{sub y}){sub 1-x}In{sub x} layers steady increases at indium addition.The thin films studied by transmission electron microscopy (TEM) and electron microdiffraction (EMD) reveal homogeneous and amorphous structure. The layer composition determined by Auger electron spectroscopy is close to that of the corresponded bulk samples.

OSTI ID:
21371467
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1203; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English