Influence of Quantum-Dots Density on Average In-Plane Strain of Optoelectronic Devices by X-Ray Renninger Scanning
Journal Article
·
· AIP Conference Proceedings
- Instituto de Fisica, Universidade de Sao Paulo, Sao Paulo, SP (Brazil)
In this work, we exploit the synchrotron X-ray Renninger scanning to inspect in-plane strain introduced in the capping process of InAs/GaAs (001) quantum dots as a function of their growth rates.
- OSTI ID:
- 21371408
- Journal Information:
- AIP Conference Proceedings, Vol. 1199, Issue 1; Conference: 29. international conference on the physics of semiconductors, Rio de Janeiro (Brazil), 27 Jul - 1 Aug 2008; Other Information: DOI: 10.1063/1.3295448; (c) 2009 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-density InAs/GaAs{sub 1−x}Sb{sub x} quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells
Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm
Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction
Journal Article
·
Mon Mar 21 00:00:00 EDT 2016
· Journal of Applied Physics
·
OSTI ID:21371408
+6 more
Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm
Journal Article
·
Mon Feb 23 00:00:00 EST 2015
· Applied Physics Letters
·
OSTI ID:21371408
Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction
Journal Article
·
Sat Nov 14 00:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:21371408
+3 more
Related Subjects
36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
STRAINS
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
NANOSTRUCTURES
PNICTIDES
SCATTERING
77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
STRAINS
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
NANOSTRUCTURES
PNICTIDES
SCATTERING