MBE Growth of GaAs Whiskers on Si Nanowires

Journal Article · Mon Jan 04 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3295399· OSTI ID:21371399

Maxwell Andrews, Aaron ^[1]; Klang, Pavel; Detz, Hermann; Schramboeck, Matthias; Schrenk, Werner ^[1]; Lugstein, Alois; Steinmair, Mathias; Hyun, Youn-Joo; Bertagnolli, Emmerich ^[2]; Mueller, Thomas; Unterrainer, Karl ^[3]; Strasser, Gottfried ^[1]

---

1. Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7/392, 1040 Wien (Austria)
2. Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7/362, 1040 Wien (Austria)
3. Photonics Institute, Vienna University of Technology, Gusshausstrasse 29/387, 1040 Wien (Austria)

We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {l_brace}112{r_brace} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.

• OSTI ID: 21371399
• Journal Information: AIP Conference Proceedings, Vol. 1199, Issue 1; Conference: 29. international conference on the physics of semiconductors, Rio de Janeiro (Brazil), 27 Jul - 1 Aug 2008; Other Information: DOI: 10.1063/1.3295399; (c) 2009 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILICON
WHISKERS
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTALS
DEPOSITION
DIFFRACTION
ELEMENTS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
LUMINESCENCE
MATERIALS
MONOCRYSTALS
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SURFACE COATING