The effect of MgO barrier on the structure and magnetic properties of Co{sub 2}MnSi films on n-Si(100) substrates

Journal Article · Sun Nov 15 04:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3260253· OSTI ID:21361930

Nahid, M A. I.; Oogane, M; Naganuma, H; Ando, Y ^[1]

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1. Department of Applied Physics, Tohoku University, Sendai 980-8579 (Japan)

We investigated the structure and magnetic properties of Co{sub 2}MnSi/MgO/n-Si(100) films with the goal of achieving efficient spin injection. The Co{sub 2}MnSi films were fabricated by dc sputtering and post annealed at 400 deg. C for 1 h. They were oriented along the <100> direction with a MgO barrier layer. A strong chemical reaction was observed between the Co{sub 2}MnSi thin films and n-Si substrates in the absence of the MgO barrier. The diffusion or chemical reaction may occur up to a MgO layer thickness of 2 nm. With a MgO layer that is 2 nm thick, Co{sub 2}MnSi possessed large saturation magnetization and low surface roughness at room temperature. The electrical (I-V) characteristics of Co{sub 2}MnSi/MgO(2 nm)/n-Si(100) obtained at various junction sizes were symmetric, suggesting that MgO was an effective tunnel barrier.

• OSTI ID: 21361930
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKALINE EARTH METAL COMPOUNDS
ALLOYS
ANGULAR MOMENTUM
ANNEALING
CHALCOGENIDES
CHEMICAL REACTIONS
COBALT ALLOYS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FERROMAGNETIC MATERIALS
FILMS
HEAT TREATMENTS
LAYERS
MAGNESIUM COMPOUNDS
MAGNESIUM OXIDES
MAGNETIC MATERIALS
MAGNETIC PROPERTIES
MAGNETIZATION
MANGANESE ALLOYS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE PROPERTIES
PHYSICAL PROPERTIES
ROUGHNESS
SILICON ALLOYS
SPIN
SPUTTERING
SUBSTRATES
SURFACE PROPERTIES
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSITION ELEMENT ALLOYS
TUNNEL EFFECT