Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

Journal Article · Tue Apr 01 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2840016· OSTI ID:21137291

Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki ^[1]

---

1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo, 152-8552 (Japan)

MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 k{omega} {mu}m{sup 2} and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling.

• OSTI ID: 21137291
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ANNEALING
DEPOSITION
HALL EFFECT
LAYERS
MAGNESIUM OXIDES
MAGNETORESISTANCE
RARE EARTHS
SPUTTERING
SUBSTRATES
SUPERCONDUCTING JUNCTIONS
SURFACES
TEMPERATURE RANGE 0273-0400 K
TEXTURE
THIN FILMS
TRANSITION ELEMENTS
TUNNEL EFFECT