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High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4937917· OSTI ID:22493055
 [1]; ;  [2];  [1]
  1. Department of Electrical and Computer Engineering, National University of Singapore (Singapore)
  2. Data Storage Institute, Agency for Science, Technology and Research - A*STAR (Singapore)
Heulser alloys Fe{sub 2}Cr{sub 1−x}Co{sub x}Si (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 10{sup 6 }erg/cm{sup 3}. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe{sub 2}CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.
OSTI ID:
22493055
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 23 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English