Cosputtered Mn-doped Si thin films studied by x-ray spectroscopy

Journal Article · Sun Nov 15 04:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3257235· OSTI ID:21361925

Jian, Ye; Yong, Jiang; Qinghua, Liu; Tao, Yao; Zhiyun, Pan; Zhihu, Sun; Wensheng, Yan; Shiqiang, Wei ^[1]; Oyanagi, H ^[1]

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1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China)

Substitutionally doped Si{sub 1-x}Mn{sub x} thin films were fabricated by a magnetron cosputtering method at a low growth temperature. X-ray absorption fine structure (XAFS) and x-ray diffraction (XRD) techniques were used to investigate the structures of the Si{sub 1-x}Mn{sub x} thin films. The XRD results exhibit that no secondary phases such as metallic Mn or Mn-Si compound can be detected. The detailed analysis of the extended XAFS together with the x-ray absorption near-edge structure spectra at the Mn K-edge unambiguously reveals that the doped Mn atoms are incorporated into the Si matrix and substitute for the Si sites in the Si lattice. The results clearly indicate that the Mn occupations in silicon thin films are quite sensitive to the growth conditions and the postannealing treatment.

• OSTI ID: 21361925
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTROSCOPY
ANNEALING
COHERENT SCATTERING
CRYSTAL GROWTH
DEPOSITION
DIFFRACTION
DOPED MATERIALS
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FILMS
FINE STRUCTURE
HEAT TREATMENTS
MAGNETRONS
MANGANESE
MATERIALS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SORPTION
SPECTRA
SPECTROSCOPY
SPUTTERING
THIN FILMS
TRANSITION ELEMENTS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY