Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

Journal Article · Sun Nov 01 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3251568· OSTI ID:21361914

Drichko, I L; Diakonov, A M; Lebedeva, E V; Smirnov, I Yu ^[1]; Mironov, O A ^[2]; Kummer, M; Kaenel, H von ^[3]

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1. A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
2. Warwick SEMINANO R and D Centre, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom)
3. Laboratorium fuer Festkoerperphysik ETH Zuerich, CH-8093 Zuerich (Switzerland)

Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau{sub e}psilon and the deformation potential constant determined.

• OSTI ID: 21361914
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 9; Other Information: DOI: 10.1063/1.3251568; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ATTENUATION
CHEMICAL VAPOR DEPOSITION
DEFORMATION
EFFECTIVE MASS
ELECTRIC CONTACTS
ELECTRIC FIELDS
ELECTRON GAS
GERMANIUM
GERMANIUM ALLOYS
GERMANIUM SILICIDES
HEATING
HETEROJUNCTIONS
HOLE MOBILITY
HOLES
LAYERS
MAGNETIC FIELDS
MHZ RANGE 01-100
OSCILLATIONS
POTENTIALS
RELAXATION
RELAXATION TIME
SEMICONDUCTOR MATERIALS
SHUBNIKOV-DE HAAS EFFECT
SILICON ALLOYS
SOUND WAVES
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL CALCULATIONS
ALLOYS
CHEMICAL COATING
DEPOSITION
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
FREQUENCY RANGE
GERMANIUM COMPOUNDS
MASS
MATERIALS
METALS
MHZ RANGE
MOBILITY
SEMICONDUCTOR JUNCTIONS
SILICIDES
SILICON COMPOUNDS
SORPTION
SURFACE COATING