Optical and structural properties of Eu-implanted In{sub x}Al{sub 1-x}N

Journal Article · Thu Oct 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3245386· OSTI ID:21361886

Roqan, I S; O'Donnell, K P; Martin, R W; Trager-Cowan, C ^[1]; Matias, V; Vantomme, A ^[2]; Lorenz, K; Alves, E ^[3]; Watson, I M ^[4]

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1. SUPA Department of Physics, Strathclyde University, Glasgow G4 0NG (United Kingdom)
2. Instituut voor Kern-en Stralingsfysica and INPAC, K.U. Leuven, Leuven (Belgium)
3. Instituto Tecnologico e Nuclear, UFA, Estrada Nacional 10, 2686-953 Sacavem (Portugal)
4. SUPA Institute of Photonics, Strathclyde University, Glasgow G4 0NW (United Kingdom)

Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu{sup 3+} emission linewidth and key structural parameters of In{sub x}Al{sub 1-x}N films on GaN in the composition range near lattice matching (xapprox0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu{sup 3+} emission from In{sub 0.13}Al{sub 0.87}N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

• OSTI ID: 21361886
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
EMISSION
ENERGY RANGE
ENERGY-LEVEL TRANSITIONS
EPITAXY
EUROPIUM IONS
EXCITATION
FILMS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
INDIUM NITRIDES
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
LAYERS
LUMINESCENCE
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCATTERING
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
THIN FILMS
X-RAY DIFFRACTION