Photoluminescence of Eu-doped GaN thin films prepared by radio frequency magnetron sputtering
- Faculty of Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577 (Japan)
The Eu-doped GaN thin films (GaN:Eu) were deposited on the sapphire substrate by means of the rf magnetron sputtering method. The GaN:Eu films were characterized by x-ray diffraction, scanning electron microscope, and photoluminescence (PL). Although as-grown GaN:Eu films (2 mol % Eu in target) exhibited weak broad Eu-related red PL, the annealing in NH{sub 3} atmosphere (1000 deg. C for 1 h) led to the remarkable enhancement of Eu-related PL lines. PL spectra of such annealed GaN:Eu films exhibited a series of sharp PL lines characteristic of substitutional Eu{sup 3+} ions at Ga sites in the GaN lattice (dominant PL line is at 622 nm for the {sup 5}D{sub 0}-{sup 7}F{sub 2} transition). On the other hand for GaN:Eu films (5 mol % Eu in target), as-grown films are amorphous and exhibited broad Eu{sup 3+}-related PL lines. The annealing led to the crystallization of the films, the elimination of Eu{sup 3+}-related PL lines, and the enhancement of the near-band-edge PL. The Eu-luminescent centers are considered to be removed during the crystallization.
- OSTI ID:
- 20634271
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 12; Other Information: DOI: 10.1063/1.1794868; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
AMMONIA
ANNEALING
CRYSTALLIZATION
DOPED MATERIALS
EUROPIUM IONS
GALLIUM NITRIDES
ION IMPLANTATION
MAGNETRONS
PHOTOLUMINESCENCE
RADIOWAVE RADIATION
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TIME DEPENDENCE
X-RAY DIFFRACTION