Effect of Si codoping on Eu{sup 3+} luminescence in GaN

Journal Article · Sun Feb 15 04:00:00 EST 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3077268· OSTI ID:21190026

Wang, R; Steckl, A J ^[1]; Brown, E E; Hommerich, U ^[2]; Zavada, J M ^[3]

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1. Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States)
2. Department of Physics, Hampton University, Hampton, Virginia 23668 (United States)
3. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

Eu and Si codoped GaN thin films were grown on sapphire by solid source molecular beam epitaxy. Eu{sup 3+} photoluminescence (PL) emission at {approx}622 nm ({sup 5}D{sub 0}-{sup 7}F{sub 2}) was enhanced by approximately five to ten times with Si doping. The effect of Si codoping on PL intensity, lifetime, and excitation dependence revealed two distinct regimes. Moderate Si doping levels (0.04-0.07 at. %) lead to an increase in lifetime combined with improved excitation efficiency and a greatly enhanced PL intensity. High Si doping levels (0.08-0.1 at. %) significantly quench the PL intensity and lifetime, due primarily to nonradiative channels produced by a high defect population.

• OSTI ID: 21190026
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
EUROPIUM IONS
EXCITATION
GALLIUM NITRIDES
LIFETIME
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS