High mobility amorphous zinc oxynitride semiconductor material for thin film transistors
- Display and SunFab Solar Business Group, Applied Materials, Santa Clara, California 95054 (United States)
Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn{sub 3}N{sub 2}) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm{sup 2} V{sup -1} s{sup -1} for the as-deposited film produced at 50 deg. C and 110 cm{sup 2} V{sup -1} s{sup -1} after annealing at 400 deg. C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium-gallium-zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.
- OSTI ID:
- 21361873
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy
Synthesis of new bimetallic transition metal oxynitrides V-Me-O-N (Me = Mo and W) by temperature-programmed reaction
Related Subjects
ANNEALING
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
CRYSTAL GROWTH
CRYSTALS
DEPOSITION
FILMS
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
INDIUM COMPOUNDS
MATERIALS
MOBILITY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
TRANSISTORS
ZINC COMPOUNDS
ZINC NITRIDES
ZINC OXIDES