Fast phase transition process of Ge{sub 2}Sb{sub 2}Te{sub 5} film induced by picosecond laser pulses with identical fluences

Journal Article · Tue Sep 15 04:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3222851· OSTI ID:21361831

Huan, Huang; Fengxiao, Zhai; Yang, Wang; Yiqun, Wu; Fuxi, Gan ^[1]; Fangyuan, Zuo; Tianshu, Lai ^[2]

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1. Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)
2. State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Sun Yet-Sen University, Guangzhou 510275 (China)

Fast phase transition processes on Ge{sub 2}Sb{sub 2}Te{sub 5} film induced by picosecond laser pulses were studied using time-resolved reflectivity measurements. It was found that after picosecond laser pulse priming, reversible switching could be occurred upon picosecond laser pulse irradiation with the same well-chosen fluence. This is very different from general knowledge that reversible phase change process will be induced by laser pulses with different powers; that is, amorphization process needs much higher fluence than crystallization process. The possible mechanism was discussed qualitatively by a melting-cooling model.

• OSTI ID: 21361831
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANTIMONY COMPOUNDS
CRYSTALLIZATION
FILMS
GERMANIUM COMPOUNDS
GLASS
IRRADIATION
LASERS
MATERIALS
MELTING
OPTICAL PROPERTIES
PHASE CHANGE MATERIALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PULSED IRRADIATION
PULSES
REFLECTIVITY
RESOLUTION
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
THIN FILMS
TIME RESOLUTION
TIMING PROPERTIES