Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
Journal Article
·
· Journal of Applied Physics
- Dpto. Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Univ. Autonoma de Madrid, 28049 Cantoblanco (Spain)
- Dpto. Fisica de Materiales, Facultad de Ciencias Fisicas, Univ. Complutense de Madrid, 28040 Madrid (Spain)
- Instituto de Microelectronica de Madrid, CNM-CSIC, Polo Tecnologico de Madrid, Tres Cantos, 28760 Madrid (Spain)
- Laboratorio General de Electronica y Automatica, CIEMAT, Edificio 22, Avenida Complutense, 22, E-28040 Madrid (Spain)
Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10{sup 19} at./cm{sup 3} of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
- OSTI ID:
- 21361791
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CATHODOLUMINESCENCE
CHALCOGENIDES
CHEMICAL ANALYSIS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELEMENTS
EMISSION
INDIUM
LUMINESCENCE
MATERIALS
METALS
MONOCRYSTALS
PHOTON EMISSION
PHYSICAL PROPERTIES
POINT DEFECTS
SEMICONDUCTOR MATERIALS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
VACANCIES
ZINC COMPOUNDS
ZINC TELLURIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CATHODOLUMINESCENCE
CHALCOGENIDES
CHEMICAL ANALYSIS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELEMENTS
EMISSION
INDIUM
LUMINESCENCE
MATERIALS
METALS
MONOCRYSTALS
PHOTON EMISSION
PHYSICAL PROPERTIES
POINT DEFECTS
SEMICONDUCTOR MATERIALS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
VACANCIES
ZINC COMPOUNDS
ZINC TELLURIDES