Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Rapid thermal annealing effect on amorphous hydrocarbon film deposited by CH{sub 4}/Ar dielectric barrier discharge plasma on Si wafer: Surface morphology and chemical evaluation

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3116734· OSTI ID:21356153
;  [1];  [2]
  1. Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Felix-Hausdorff-Str. 6, 17489 Greifswald (Germany)
  2. Surface Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata 700 064 (India)
The effects of rapid thermal annealing (RTA) on amorphous hydrogenated carbon-coated film on Si wafer, deposited by CH{sub 4}/Ar dielectric barrier discharge plasma (at half of the atmospheric pressure), was examined. Bubbles-like structures were formed on the surface of the deposited carbon-coated film. The surface morphology studied by scanning electron microscopy (SEM), which showed that the effect of RTA on the film changing the morphological property drastically at 600 deg. C and most of the bubbles started evaporating above 200 deg. C. The inbuilt energy dispersive x-ray in SEM gives the quantitative analysis of the annealed surface. X-ray photoelectron spectroscopy results of the as-deposited films agree with the IR results in that the percent of Si-CH{sub 3}, Si-O-Si and C-O(H) stretching vibrational band in the film. Most of these bands disappeared as the sample was annealed at 600 deg. C in Ar medium.
OSTI ID:
21356153
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English