Improved interfacial state density in Al{sub 2}O{sub 3}/GaAs interfaces using metal-organic chemical vapor deposition
- Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139 (United States)
In situ deposition of Al{sub 2}O{sub 3} on GaAs was performed by chemical-vapor-deposition (CVD) with trimethyaluminum and isopropanol as precursors. A gallium-rich region in the Al{sub 2}O{sub 3} thin film above the interface was spontaneously formed via the in situ CVD process. Ga-enrichment of the interface was observed using secondary ion mass spectrometry (SIMS) depth profile measurement. X-ray photoelectron spectroscopy (XPS) results show that the gallium-rich region consists of Al{sub 2}O{sub 3} and Ga{sub 2}O{sub 3}, but no As{sub 2}O{sub 3} was observed. The Ga{sub 2}O{sub 3}-Al{sub 2}O{sub 3} layer above the oxide/GaAs interface reduces the frequency dispersion as measured with capacitance-voltage (C-V) characteristics and lowers the interfacial state density as compared to atomic-layer-deposition *(ALD) deposited films which do not display this gallium enrichment above the interface.
- OSTI ID:
- 21347447
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 96; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ALCOHOLS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIC OXIDES
ARSENIDES
CAPACITANCE
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL ANALYSIS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DISPERSIONS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM OXIDES
HYDROXY COMPOUNDS
ION MICROPROBE ANALYSIS
IONS
LAYERS
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS
METALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
PNICTIDES
PRECURSOR
PROPANOLS
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
SURFACE COATING
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ALCOHOLS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIC OXIDES
ARSENIDES
CAPACITANCE
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL ANALYSIS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DISPERSIONS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM OXIDES
HYDROXY COMPOUNDS
ION MICROPROBE ANALYSIS
IONS
LAYERS
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS
METALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
PNICTIDES
PRECURSOR
PROPANOLS
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
SURFACE COATING
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY