Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Improved interfacial state density in Al{sub 2}O{sub 3}/GaAs interfaces using metal-organic chemical vapor deposition

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3428790· OSTI ID:21347447
;  [1]
  1. Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139 (United States)
In situ deposition of Al{sub 2}O{sub 3} on GaAs was performed by chemical-vapor-deposition (CVD) with trimethyaluminum and isopropanol as precursors. A gallium-rich region in the Al{sub 2}O{sub 3} thin film above the interface was spontaneously formed via the in situ CVD process. Ga-enrichment of the interface was observed using secondary ion mass spectrometry (SIMS) depth profile measurement. X-ray photoelectron spectroscopy (XPS) results show that the gallium-rich region consists of Al{sub 2}O{sub 3} and Ga{sub 2}O{sub 3}, but no As{sub 2}O{sub 3} was observed. The Ga{sub 2}O{sub 3}-Al{sub 2}O{sub 3} layer above the oxide/GaAs interface reduces the frequency dispersion as measured with capacitance-voltage (C-V) characteristics and lowers the interfacial state density as compared to atomic-layer-deposition *(ALD) deposited films which do not display this gallium enrichment above the interface.
OSTI ID:
21347447
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 96; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English