Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film

Journal Article · Mon May 10 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3428788· OSTI ID:21347443

Chang, K -S ^[1]; Green, M L; Levin, I; Hattrick-Simpers, J R; Jaye, C; Fischer, D A ^[1]; Takeuchi, I ^[2]; De Gendt, S ^[3]

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1. National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899 (United States)
2. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States)
3. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Department of Chemistry, KU Leuven, 3000 Leuven (Belgium)

This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/HfO{sub 2} system, crucial data for understanding the electrical properties of Ta-C-N/HfO{sub 2}. Combinatorial Ta-C-N 'library' (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N){sub x} forms and extends to compositions (0.3<=Ta<=0.5 and 0.57<=Ta<=0.67) that were previously unknown. The thermal stability of the Ta-C-N/HfO{sub 2} library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/HfO{sub 2}/SiO{sub 2}/Si exhibiting good thermal stability up to 950 deg. C.

• OSTI ID: 21347443
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON COMPOUNDS
CHALCOGENIDES
CHEMICAL ANALYSIS
COHERENT SCATTERING
DEPOSITION
DIELECTRIC MATERIALS
DIFFRACTION
DISPERSIONS
ELECTRICAL PROPERTIES
ELECTRODES
ELECTRON MICROSCOPY
ELECTRON PROBES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EMISSION
EQUIPMENT
FILMS
FLUORESCENCE
HAFNIUM COMPOUNDS
HAFNIUM OXIDES
HOMOGENEOUS MIXTURES
LUMINESCENCE
MAGNETRONS
MATERIALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MIXTURES
NONDESTRUCTIVE ANALYSIS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PHYSICAL PROPERTIES
PROBES
REFRACTORY METAL COMPOUNDS
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SOLID SOLUTIONS
SOLUTIONS
SPECTROSCOPY
SPUTTERING
TANTALUM COMPOUNDS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY EMISSION ANALYSIS
X-RAY FLUORESCENCE ANALYSIS