Plasma-assisted molecular beam epitaxy of high quality In{sub 2}O{sub 3}(001) thin films on Y-stabilized ZrO{sub 2}(001) using In as an auto surfactant
- Materials Department, University of California-Santa Barbara, Santa Barbara, California 93106 (United States)
- Department of Electrical and Computer Engineering, University of California-Santa Barbara, Santa Barbara, California 93106 (United States)
The surface roughness of In{sub 2}O{sub 3}(001) films is a roadblock to potential semiconductor applications of this material. Using plasma-assisted molecular beam epitaxy we found that In{sub 2}O{sub 3}(001) films grow rough by the formation of (111) facets and In{sub 2}O{sub 3}(111) films grow smooth without facetting due to the conventionally used (oxygen-rich) conditions. This behavior indicates that the (111) surface is thermodynamically prefered over the (001) surface. We demonstrate that under indium-rich growth conditions these thermodynamics are changed allowing In{sub 2}O{sub 3}(001) films to grow smoothly without facetting. Surface indium plays a key role by acting as an auto surfactant that lowers the surface free energy difference between the (001) and the (111) surface.
- OSTI ID:
- 21347363
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 95; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CHALCOGENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
ELEMENTS
ENERGY
EPITAXY
FILMS
FREE ENERGY
INDIUM
INDIUM COMPOUNDS
INDIUM OXIDES
MATERIALS
METALS
MOLECULAR BEAM EPITAXY
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
ROUGHNESS
SEMICONDUCTOR MATERIALS
SURFACE ENERGY
SURFACE PROPERTIES
SURFACTANTS
THERMODYNAMIC PROPERTIES
THERMODYNAMICS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES