Superlattice Photocathode Damage Analysis
Journal Article
·
· AIP Conference Proceedings
- Center for Injectors and Sources, Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States)
Jefferson Lab uses 100 kV DC high voltage photoguns with high polarization strained superlattice GaAs photocathodes to achieve electron beam polarization over 80%. The photocathode is subjected to back-bombardment from ionized residual gasses during operation. We present surface analyses using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) to characterize photocathode damage.
- OSTI ID:
- 21316852
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1149; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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