Superlattice Photocathode Damage Analysis

Conference · Sat Aug 01 04:00:00 EDT 2009 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3215588· OSTI ID:2000055

Stutzman, Marcy L.; Grames, Joseph

Jefferson Lab uses 100 kV DC high voltage photoguns with high polarization strained superlattice GaAs photocathodes to achieve electron beam polarization over 80%. The photocathode is subjected to back-bombardment from ionized residual gasses during operation. We present surface analyses using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) to characterize photocathode damage.

• Research Organization: Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Nuclear Physics (NP)
• DOE Contract Number: AC05-06OR23177
• OSTI ID: 2000055
• Report Number(s): JLAB-ACC-09-1092; DOE/OR/23177-1058
• Conference Information: Journal Name: AIP Conference Proceedings Journal Issue: 1 Journal Volume: 1149
• Country of Publication: United States
• Language: English