Atomic migration in molten and crystalline Ge{sub 2}Sb{sub 2}Te{sub 5} under high electric field

Journal Article · Mon Jul 20 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3184584· OSTI ID:21308702

Yang, Tae-Youl; Park, Il-Mok; Kim, Byoung-Joon; Joo, Young-Chang ^[1]

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1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

Atomic migration under an electric field, electromigration, in molten and crystalline Ge{sub 2}Sb{sub 2}Te{sub 5} was studied using a pulsed dc stress to an isolated line structure. Under a single pulse ({approx}10{sup -3} s), Ge{sub 2}Sb{sub 2}Te{sub 5} was melted by Joule heating, and an electrostatic force-induced drift of Ge and Sb toward the cathode and Te toward the anode was observed. Effective charge numbers were calculated to be 0.28, 0.38, and -0.29 for Ge, Sb, and Te, respectively. Electromigration in the crystalline state was studied by applying a 10 MHz pulsed dc; constituent elements migrated toward the cathode, which suggests a hole wind-force operating in this phase.

• OSTI ID: 21308702
• Journal Information: Applied Physics Letters, Vol. 95, Issue 3; Other Information: DOI: 10.1063/1.3184584; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANODES
ANTIMONY ALLOYS
CATHODES
CRYSTALS
EFFECTIVE CHARGE
ELECTRIC FIELDS
ELECTROCHEMISTRY
ELECTROPHORESIS
GERMANIUM ALLOYS
JOULE HEATING
MHZ RANGE 01-100
PHASE CHANGE MATERIALS
PULSES
TELLURIUM ALLOYS