Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers

Journal Article · Mon Dec 07 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3271770· OSTI ID:21294499

Li, L; Yang, Z; Kong, J Y; Liu, J L ^[1]

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1. Department of Electrical Engineering, Quantum Structures Laboratory, University of California, Riverside, California 92521 (United States)

p-ZnO/i-CdZnO/n-ZnO was grown on n-type Si substrates by plasma-assisted molecular-beam epitaxy. Rectifying I-V curves show typical diode characteristics. Blue electroluminescence emissions at around 459 nm were observed when the diodes were forward-biased at room temperature. The emission intensity increases with the increase of the injection current. Temperature dependent electroluminescence measurements suggest that the peak positions of blue emissions represent the band gap of the CdZnO active layer, which changes with the temperature.

• OSTI ID: 21294499
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM COMPOUNDS
CRYSTAL GROWTH
ELECTROLUMINESCENCE
HETEROJUNCTIONS
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES