Light emitting field effect transistor with two self-aligned Si nanocrystal layers

Journal Article · Mon Nov 09 00:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3242379· OSTI ID:21294443

Beyer, V; Schmidt, B; Heinig, K -H ^[1]; Stegemann, K -H ^[2]

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1. Forschungszentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 51 01 19, D-01314 Dresden (Germany)
2. Signet Solar GmbH, Am Fuchsloch 10, D-04720 Mochau (Germany)

Light emitting field effect transistors based on narrow layers of silicon nanocrystals (NCs) in the gate oxide were fabricated. Direct quantum mechanical electron and hole tunneling into NCs was achieved by self-alignment of NCs-interface-distances to {approx}2 nm. The direct tunneling reduces oxide degradation, prolongs device lifetime and increases operation speed. Self-alignment occurs during thermal treatment of ion irradiated stacks of 50 nm polycrystalline silicon/15 nm SiO{sub 2}/(001)Si substrate. An alternating voltage (ac) was applied to the gate to inject charges into the NCs. Due to injection by direct tunneling, electroluminescence extends to higher ac frequencies than reported so far.

• OSTI ID: 21294443
• Journal Information: Applied Physics Letters, Vol. 95, Issue 19; Other Information: DOI: 10.1063/1.3242379; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
ELECTRONS
FIELD EFFECT TRANSISTORS
HEAT TREATMENTS
HOLES
ION BEAMS
IONS
LAYERS
NANOSTRUCTURES
POLYCRYSTALS
QUANTUM MECHANICS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SUBSTRATES
TUNNEL EFFECT
VISIBLE RADIATION