Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation

Journal Article · Mon Aug 10 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3204007· OSTI ID:21294240

Buljan, M ^[1]; Bogdanovic-Radovic, I; Karlusic, M; Desnica, U V; Radic, N; Dubcek, P ^[2]; Drazic, G ^[3]; Salamon, K ^[4]; Bernstorff, S ^[5]; Holy, V ^[1]

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1. Charles University in Prague, Prague 12116 (Czech Republic)
2. Ruder Boskovic Institute, Zagreb 10000 (Croatia)
3. Jozef Stefan Institute, Ljubljana 1000 (Slovenia)
4. Institute of Physics, Zagreb 10000 (Croatia)
5. Sincrotrone Trieste, Basovizza 34012 (Italy)

We demonstrate the production of a well ordered three-dimensional array of Ge quantum dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and annealing of a multilayer film. Structural analysis shows that quantum dots nucleate along the direction of the ion beam used for irradiation, while the mutual distance of the quantum dots is determined by the diffusion properties of the multilayer material rather than the distances between traces of ions that are used for irradiation.

• OSTI ID: 21294240
• Journal Information: Applied Physics Letters, Vol. 95, Issue 6; Other Information: DOI: 10.1063/1.3204007; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
AMORPHOUS STATE
ANNEALING
GERMANIUM
ION BEAMS
IRRADIATION
LAYERS
NUCLEATION
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICA
SILICON COMPOUNDS
THIN FILMS
THREE-DIMENSIONAL CALCULATIONS