Photoelectrochemical etching of p-type GaN heterostructures

Journal Article · Mon Apr 13 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3120545· OSTI ID:21294009

Tamboli, Adele C; Hirai, Asako; Nakamura, Shuji; DenBaars, Steven P; Hu, Evelyn L ^[1]

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1. Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States)

We have developed a method for photoelectrochemical etching of p-type semiconductors, including GaN, that relies on the built-in bandbending already inherent to optical devices. Electron-hole pairs are generated by filtered light in a buried small bandgap layer, and a pn junction separates the charge. Electrons are sent into the n-type layer, where they are extracted, and holes to the surface, where they participate in etching reactions. This technique is rapid and inexpensive, and it requires no applied bias or elevated temperatures. This technique has widespread applications to GaN optical devices where ion-damage-free etching or wide tunability of etch parameters is desired.

• OSTI ID: 21294009
• Journal Information: Applied Physics Letters, Vol. 94, Issue 15; Other Information: DOI: 10.1063/1.3120545; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRONS
ENERGY GAP
ETCHING
GALLIUM NITRIDES
HOLES
P-N JUNCTIONS
RECOMBINATION
SEMICONDUCTOR MATERIALS