Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

Monavarian, Morteza; Feezell, Daniel F.; Aragon, Andrew; Mishkat-Ul-Masabih, Saadat; Allerman, Andrew A.; Armstrong, Andrew; Crawford, Mary H.

Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

Patent · 16 November 2021

OSTI ID:1860076

Monavarian, Morteza; Feezell, Daniel F.; Aragon, Andrew; Mishkat-Ul-Masabih, Saadat; Allerman, Andrew A.; Armstrong, Andrew; Crawford, Mary H.

A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.

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Research Organization:: Univ. of New Mexico, Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AR0000869

Assignee:: STC.UNM (Albuqueque, NM)

Patent Number(s):: 11,177,126

Application Number:: 16/684,313

OSTI ID:: 1860076

Country of Publication:: United States

Language:: English

References (18)

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