Thermal desorption of deuterium implanted into beryllium
- Institute of Physical Chemistry, Moscow (Russian Federation); and others
By means of TDS measurements it is shown that the desorption of deuterium from Be implanted with 5 keV D ions to fluences, {Phi}, from 1x10{sup 20} D/m{sup 2} to 1x10{sup 21} D/m{sup 2} proceeds in one high temperature stage B, while at {Phi} {ge} 1.2x10{sup 21}D/m{sup 2} one more stage A is added. The desorption maximum A is narrow and consists of two peaks A{sub 1} and A{sub 2} at about 460 K and 490 K, respectively. Peak A{sub 1} is attributed to the desorption of deuterium from the walls of opened channels formed under D ion implantation. Peak {sub A}2 is a consequence of the opening of a part of closed bubbles/channels to the outer surface. The position of maximum B shifts noticeably and nonsteadily on the fluence in a range from 850 to 1050 K. The origin of this maximum is the liberation of D atoms bound at vacancy complexes discussed previously by Wampler. The dependence of Tm(B) on the fluence is governed by the interaction of freely migrating D atoms with partly opened or fully closed gas cavity arrangements which are created under temperature ramping, but differently in specimens implanted with D ions to different fluences.
- Research Organization:
- Lockheed Idaho Technologies Co., Idaho Falls, ID (United States)
- OSTI ID:
- 212927
- Report Number(s):
- CONF-9509218-; ON: DE96002404; TRN: 96:010076
- Resource Relation:
- Journal Volume: 233-237; Conference: 2. International Energy Agency (IEA) workshop on beryllium technology for fusion, Jackson, WY (United States), 6-8 Sep 1995; Other Information: PBD: Sep 1995; Related Information: Is Part Of Proceedings: 2nd IEA international workshop on beryllium technology for fusion; Longhurst, G.R.; PB: 399 p.
- Country of Publication:
- United States
- Language:
- English
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